• SiC衬底、外延及材料表征

• 功率半导体器件设计和研发

• 功能材料制备及光电器件应用

• 超宽禁带半导体材料、工艺及器件应用的前瞻性研究

• 国家自然科学基金青年基金，主持，2019年1月-2021年12月

• 中国博士后科学基金第63批面上项目，主持，2018年5月-2020年8月

• 中国博士后科学基金第12批特别资助项目，主持，2019年5月-2020年8月

• Hong-Ping Ma, Jia-He Yang, Jia-Jia Tao, Kai-Ping Yuan, Pei-Hong Cheng, Wei Huang, Jia-Cheng Wang, Qixin Guo, Hong-Liang Lu, and David Wei Zhang, Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting,Nano Energy, 66, 104089, 2019，IF=16.602

• Hong-Ping Ma, Xiao-Xi Li, Jia-He Yang, Peihong Cheng, Wei Huang, Jingtao Zhu, Tien-Chien Jen, Qixin Guo, Hong-Liang Lu, and David Wei Zhang, Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition,Chemistry of Materials,31(18), 7405-7416, 2019，IF=9.567

• Hong-Ping Ma, Jia-He Yang, Jian-Guo Yang, Li-Yuan Zhu, Wei Huang, Guang-Jie Yuan, Ji-Jun Feng, Tienchien Jen and Hong-Liang Lu, Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice, Nanomaterials,9(1): 55, 2019，IF=4.324

• Hong-Ping Ma, Hong-Liang Lu, Tao Wang, Jian-Guo Yang, Xing Li, Jin-Xin Chen, Jia-Jia Tao, Jingtao Zhu, Qi-Xin Guo and David Wei Zhang, Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition,Journal of Materials Chemistry C, 6, 12518-12528, 2018，IF=7.059

• Jia-Jia Tao#,Hong-Ping Ma#, Kai-Ping Yuan, Yang Gu, Jian-Wei Lian, Xiao-Xi Li, Wei Huang, Michael Nolan, Hong-Liang Lu, and David Wei Zhang, Modification of 1D TiO2 nanowires with GaON by atomic layer deposition for TiO2@GaON core–shell nanowires with enhanced photoelectrochemical performance,nanoscale, 12, 7159-7173, 2020，IF=6.895

• Hong-Ping Ma, Hong-Liang Lu, Jia-He Yang, Xiao-Xi Li, Tao Wang, Wei Huang, Guang-Jie Yuan, Fadei F. Komarov, and David Wei Zhang, Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen- Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition, Nanomaterials, 8(12): 1008, 2018，IF=4.324

• Hong-Ping Ma, Xinbin Cheng, Jinlong Zhang, and Yongjian Tang, “Effect of boundary continuity on nanosecond laser damage of nodular defects in high-reflection coatings,Optics Letters, 42(3),478-481, 2017，IF=3.866

• Hong-Ping Ma, Xinbin Cheng, Jinlong Zhang, Tongbao Li, Jin Yu, Zhijun Kang, and Yongjian Tang, Electric-field intensity enhancement of a series of artificial nodules in a broadband high-reflection coating,Optical Engineering, 56(1), 011027-011027, 2017

• Hong-Ping Ma, Xinbin Cheng, Jinlong Zhang, and Yongjian Tang, Damage growth characteristics of artificial nodules prepared by different processes ,Infrared and Laser Engineering, 46(5), 190-195, 2017

• Tao Wang, Hong-Ping Ma, Jian-Guo Yang, Jingtao Zhu, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang, Investigation of the Optical and Electrical Properties of ZnO/Cu/ZnO Multilayers Grown by Atomic Layer Deposition,Journal of Alloys and Compounds,744, 381-385, 2018

• Jin-Xin Cheng, Xiao-Xi Li,Hong-Ping Ma, Wei Huang, Zhi-Gang Ji, Chang-Tai Xia, Hong-Liang Lu*, and David Wei Zhang*, Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to beta-Ga2O3 Nanobelt Field-Effect Transistors ,ACS Applied Materials & Interfaces,11, 32127-32134,2019

• Xing Li, Hong-Liang Lu*, Hong-Ping Ma, Jian-Guo Yang, Jin-Xin Cheng, Wei Huang, Qi-Xin Guo, Ji-Jun Feng and David Wei Zhang, Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition, Current Applied Physics,19(2), 72-81, 2019

• Jin-Xin Cheng, Jia-Jia Tao, Hong-Ping Ma, Hao Zhang, Ji-Jun Feng, Chang-Tai Xia, Hong-Liang Lu*, and David Wei Zhang, Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy ,Applied Physics Letters,112(26), 261602-261208, 2018

• Jia-Jia Tao, Hong-Liang Lu*, Yang Gu,Hong-Ping Ma, Xing Li, Jin-Xin Cheng, Wen-Jun Liu, Hao Zhang, and Ji-Jun Feng, Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films,Applied Surface Science,476, 733-740, 2019

• Li-Yuan Zhu, Kai-Ping Yuan, Jian-Guo Yang,Hong-Ping Ma, Tao Wang, Xin-Ming Ji, Ji-Jun Feng, Devi, Anjana, and Hong-Liang Lu*, Fabrication of heterostructured p-CuO/n-SnO2 core-shell nanowires for enhanced sensitive and selective formaldehyde detection,Sensors and Actuators B-Chemical,290, 233-241, 2019

发明专利：

• 一种利用原子层沉积一步法可控制备不同氧氮含量的GaON薄膜的方法，公开号：CN201910352481.5，专利申请日：20190429

• 利用原子层沉积制备GaON薄膜包覆微结构材料的方法，公开号：CN201910352388.4，专利申请日：20190429

• 一种利用等离子体增强原子层沉积可控制备不同氧含量SiON薄膜的方法，公开号：CN201811618347.7，专利申请日：20181228

• 一种利用等离子体增强原子层沉积调控氧化硅薄膜化学计量比的方法，公开号：CN201811530352.2，专利申请日：20181214

• 一种用于改善硅超晶格薄膜光电特性的低温微波退火方法，公开号：CN201811530397.X，专利申请日：20181214

• 2020年10月至今，复旦大学工程与应用技术研究院，青年副研究员

• 2017年9月-2020年9月，复旦大学，博士后研究员

• 2011年9月-2017年6月，同济大学，博士

• 2007年9月-2011年6月，同济大学，学士

• 2019年度，复旦大学，优秀博士后，排名10/1200

• 2010年度，中国光学学会，全国大学生光电设计大赛，三等奖，排名3/3

• 2010年度，上海市教育委员，上海市大学生计算机应用能力大赛，三等奖，排名1/2